| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting laser element and a surface-emitting laser module which are capable of emitting light uniformly from light emitting regions, and to provide a method for manufacturing them with a high yield. SOLUTION: The method is used for manufacturing the surface light emitting laser element 1. Further, the method comprises a first process of preparing a conductive GaN composite region substrate which contains a high dislocation density high conductive region 10a, a low dislocation density high conductive region 10b, and a low dislocation density low conductive region 10c, as a conductive GaN substrate 10; a semiconductor layer forming process of forming two or more group III-V compound semiconductor layers 20, which contains a light emitting layer 200 on the conductive GaN composite region substrate; and an electrode forming process of forming a semiconductor-side electrode 15 and a substrate-side electrode 11. The semiconductor layers and electrodes are formed so as to position the light emitting region 200a, into which carriers are made to flow, of the light emitting layer 200 within and above the low dislocation density high conductive region 10b. COPYRIGHT: (C)2008,JPO&INPIT
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