| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser device in which an operating voltage is reduced. SOLUTION: The nitride-based semiconductor laser device comprises: an active layer composed of a nitride-based semiconductor; an overflow prevention layer that is provided on the active layer, and includes a first conductive first nitride-based semiconductor for suppressing the overflow of carrier from the active layer; an intermediate layer that is provided on and adjacent to the overflow prevention layer, and includes a first conductive second nitride-based semiconductor; and a clad layer that is provided on the intermediate layer, and includes a first conductive third nitride-based semiconductor. The first nitride-based semiconductor, the second nitride-based semiconductor, and the third nitride-based semiconductor contain the same element, with the composition ratio of the same element smaller in this order. COPYRIGHT: (C)2008,JPO&INPIT
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