A TERAHERTZ RADIATING DEVICE AND FABRICATING METHOD FOR THE SAME

摘要

According to the present invention, a terahertz radiating device comprises: a high electron mobility transistor (HEMT); a source provided in the HEMT; a gate provided in the HEMT; a drain provided in the HEMT; a first antenna connected to the drain; a drain bias applying direct current (DC) voltage to the drain; and a source-gate connection port for connecting the source and the gate by an element unit. According to the present invention, provided is the terahertz radiating device which can be commercially used, and especially, a high output can be obtained.