| 摘要 |
The present invention provides a transistor controlling on and off states of electricity by having one or more bending modifications of graphene which controls on and off states of electricity by controlling the height of a Fermi level of one or more graphenes between the one or more graphenes and a drain electrode while selecting among one or more piezo materials provided in a lower part of the one or more graphenes, a magnetic particle, and a particle having an electric charge while the graphenes and a drain electrode are provided in different planes controls on and off states of electricity by having the one or more graphenes to have one or more bending modifications caused by voltage of a barrier adjusting circuit intersected with a circuit of the one or more graphenes. |
