Resistive random access memory and method for manufacturing the same

摘要

A resistive random access memory (RRAM) including a substrate, a dielectric layer, memory cells and an interconnect structure is provided. The dielectric layer is disposed on the substrate. The memory cells are vertically and adjacently disposed in the dielectric layer, and each of the memory cells includes a first electrode, a second electrode and a variable resistance structure. The second electrode is disposed on the first electrode. The variable resistance structure is disposed between the first electrode and the second electrode. In two vertically adjacent memory cells, the first electrode of the upper memory cell and the second electrode of the lower memory cell are disposed between the adjacent variable resistance structures and isolated from each other. The interconnect structure is disposed in the dielectric layer and connects the first electrodes of the memory cells.

主权项

1. A method of manufacturing a resistive random access memory, comprising:
forming a dielectric layer on a substrate; forming a plurality of memory cells vertically and adjacently disposed in the dielectric layer, wherein each of the memory cells comprises:
a first electrode;a second electrode, disposed on the first electrode; anda variable resistance structure, disposed between the first electrode and the second electrode, whereinin two vertically adjacent memory cells, the first electrode of the upper memory cell and the second electrode of the lower memory cell are disposed between the adjacent variable resistance structures and isolated from each other, and a method of forming the first electrodes comprises performing a damascene process; and forming an interconnect structure in the dielectric layer, wherein the interconnect structure connects the first electrodes of the memory cells.