发明名称 |
Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect |
摘要 |
The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable. |
申请公布号 |
US9478729(B2) |
申请公布日期 |
2016.10.25 |
申请号 |
US201514814163 |
申请日期 |
2015.07.30 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Lee Kyung-Jin;Seo Soo-Man |
分类号 |
H01L29/82;H01L21/02;H01L29/66;G11C11/00;H01L43/02;H01L43/10;G11C11/16;H01L43/08 |
主分类号 |
H01L29/82 |
代理机构 |
Myers Bigel & Sibley, P.A. |
代理人 |
Myers Bigel & Sibley, P.A. |
主权项 |
1. A magnetic memory device comprising:
a first fixed magnetic layer; a first free magnetic layer; a second free magnetic layer; a second fixed magnetic layer; a first non-magnetic layer disposed between the first fixed magnetic layer and the first free magnetic layer; a second non-magnetic layer disposed between the first free magnetic layer and the second free magnetic layer; and a third non-magnetic layer between the second free magnetic layer and the second fixed magnetic layer, wherein the first fixed magnetic layer is a thin layer formed of a material that has a fixed magnetization direction and that is magnetized in a perpendicular direction to a plane of the first fixed magnetic layer, wherein the first free magnetic layer is a thin layer formed of a material that has a magnetization direction which can be changed by an applied current and that is magnetized in a perpendicular direction to a plane of the first free magnetic layer, wherein the second free magnetic layer is a thin layer formed of a material that has a magnetization direction which can be changed by an applied current and that is magnetized in a horizontal direction to a plane of the second free magnetic layer, wherein the second fixed magnetic layer is a thin layer formed of a material that has a fixed magnetization direction opposite to the first fixed magnetic layer and that is magnetized in a perpendicular direction to a plane of the second fixed magnetic layer, and wherein a saturation magnetization value of the material magnetized in the horizontal direction is in a range of 300-2000 kA/m. |
地址 |
KR |