| 发明名称 | Semiconductor light emitting device | ||
| 摘要 | There is provided a semiconductor light emitting device including: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer. | ||
| 申请公布号 | US9478702(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201414513026 | 申请日期 | 2014.10.13 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Hwang Sung Won;Kim Je Won;Ahn Il Ho;Choi Soo Jeong |
| 分类号 | H01L33/08;F21V8/00;F21V19/00;F21K99/00;F21Y101/02;F21S8/10;H01L33/00;H01L33/24;H01L33/16 | 主分类号 | H01L33/08 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer; a mask layer disposed on the first conductivity-type semiconductor base layer and including a graphene layer with a plurality of openings exposing the first conductivity-type semiconductor base layer; and a plurality of light emitting nanostructures disposed on the openings and each including a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer, wherein the mask layer comprises first, second and third layers sequentially stacked on the first conductivity-type semiconductor base layer, and the second layer is the graphene layer, and each of the first and third layers is an oxide layer or a nitride layer. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||