发明名称 Sensor unit and solid-state imaging device
摘要 A sensor unit includes a metallic base member, a solid-state imaging element, and amplifier chips. The base member has a first placement surface and a second placement surface. The solid-state imaging element has a photodetecting surface, and is disposed on the first placement surface such that a rear surface and the first placement surface face each other. The amplifier chips are mounted on a substrate disposed on the second placement surface. The base member further has side wall portions facing side surfaces of the solid-state imaging element. The chips and the solid-state imaging element are electrically connected to one another via a bonding wire. The chips are thermally coupled to the base member via a thermal via of the substrate.
申请公布号 US9478683(B2) 申请公布日期 2016.10.25
申请号 US201214362643 申请日期 2012.12.04
申请人 HAMAMATSU PHOTONICS K.K. 发明人 Fujita Kazuki;Kyushima Ryuji;Mori Harumichi;Okada Haruyoshi;Sawada Junichi
分类号 G01T1/00;H01L31/024;H04N5/32;H01L27/146;H04N5/378;H04N5/225 主分类号 G01T1/00
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. A sensor unit comprising: a base member being a metallic member having a principal surface and a rear surface, and in which a first placement region and a second placement region whose height based on the rear surface is lower than the first placement region and whose area is smaller than the first placement region are formed on the principal surface; a solid-state imaging element having a photodetecting surface, and a rear surface which is located on the opposite side of the photodetecting surface, and being disposed on the first placement region such that the rear surface and the first placement region face each other; and a signal readout semiconductor chip being mounted on a wiring substrate disposed on the second placement region of the base member, and amplifying a signal output from the solid-state imaging element, to output the signal, wherein the base member further has a side wall portion facing a side surface of the solid-state imaging element, the signal readout semiconductor chip and the solid-state imaging element are electrically connected to one another via a bonding wire, the wiring substrate has a thermal via, and the signal readout semiconductor chip is thermally coupled to the base member via the thermal via, and in the base member, the side wall portion is a metallic portion and extends along the alignment direction of the first placement region and the second placement region.
地址 Hamamatsu-shi, Shizuoka JP