| 发明名称 | Thin film transistor substrate, method of manufacturing the same, and liquid crystal display panel having the same | ||
| 摘要 | A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer. | ||
| 申请公布号 | US9478667(B2) | 申请公布日期 | 2016.10.25 |
| 申请号 | US201514661470 | 申请日期 | 2015.03.18 |
| 申请人 | SAMSUNG DISPLAY CO., LTD. | 发明人 | Moon Yeon Keon;Kano Masataka;Yang Sung-Hoon;Lim Ji Hun;Koo So Young;Kim Myoung Hwa;Lim Jun Hyung |
| 分类号 | G02F1/136;G02F1/1333;H01L29/786;H01L29/66;G02F1/1368 | 主分类号 | G02F1/136 |
| 代理机构 | Lee & Morse P.C. | 代理人 | Lee & Morse P.C. |
| 主权项 | 1. A thin film transistor substrate, comprising: a substrate; a bottom gate on the substrate; a first insulating layer on the substrate and on the bottom gate; a drain on the first insulating layer; a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain; an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source; a second insulating layer on the drain, the source, and the active layer; and a top gate on the second insulating layer. | ||
| 地址 | Yongin, Gyeonggi-Do KR | ||