Semiconductor device having a lower diode region arranged below a trench

摘要

A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes: a drift region, a source region, and a body region arranged between the source and drift regions; a diode region and a pn junction between the diode and drift regions; a trench having a first sidewall, a second sidewall opposite the first sidewall, and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom; a gate electrode in the trench and dielectrically insulated from the body, diode and drift regions by a gate dielectric. The diode region has a lower diode region arranged below the trench bottom, and the lower diode region has a maximum of a doping concentration distant to the trench bottom. A corresponding method of manufacturing the device also is provided.

主权项

1. A semiconductor device, comprising a semiconductor body and at least one device cell integrated in the semiconductor body, the at least one device cell comprising:
a drift region, a source region, and a body region arranged between the source region and the drift region; a diode region and a pn junction between the diode region and the drift region; a trench with a first sidewall, a second sidewall opposite the first sidewall, and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom of the trench; a gate electrode arranged in the trench and dielectrically insulated from the body region, the diode region and the drift region by a gate dielectric; wherein the diode region comprises a lower diode region arranged below the bottom of the trench; and wherein the lower diode region has a maximum of a doping concentration distant to the bottom of the trench.