Solid-state image sensor

摘要

An image sensor includes a first pixel having a first color filter, a first reflection region which reflects light from the first color filter, and a first photoelectric conversion portion arranged in a semiconductor layer and located between the first color filter and the first reflection region, and a second pixel including a second color filter, a second reflection region which reflects light from the second color filter, and a second photoelectric conversion portion arranged in the semiconductor layer and located between the second color filter and the second reflection region. Wavelength corresponding to a maximum transmittance of the first color filter is shorter than wavelength corresponding to a maximum transmittance of the second color filter. An area of the first reflection region is smaller than area of the second reflection region.

主权项

1. A solid-state image sensor including a semiconductor layer and a wiring structure, wherein the semiconductor layer is a silicon substrate having a thickness not less than 2 μm, the sensor comprising:
a pixel of a first type including a first color filter, a first member included in one wiring layer of the wiring structure, and a first photoelectric conversion portion arranged in the semiconductor layer, the first photoelectric conversion portion being located between the first color filter and the first member; and a pixel of a second type including a second color filter, a second member included in one wiring layer of the wiring structure, the second member having a reflection region which reflects light transmitted through the semiconductor layer, and a second photoelectric conversion portion arranged in the semiconductor layer, the second photoelectric conversion portion being located between the second color filter and the second member, wherein the semiconductor layer has a first face and a second face, the first member and the second member are arranged on a side of the first face, the first color filter and the second color filter are arranged on a side of the second face, wherein the wiring structure includes an insulation film disposed between the one wiring layer and the semiconductor layer, and an electrode of polysilicon is arranged between the insulation film and the semiconductor layer, wherein a wavelength corresponding to a maximum transmittance of the first color filter is in a blue wavelength range and is shorter than a wavelength corresponding to a maximum transmittance of the second color filter, wherein an area of the first member projected onto the first face of the semiconductor layer is smaller than an area of the second member projected onto the first face, and wherein the electrode and the first member are both arranged on a single axis perpendicular to the first face.