| 发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING CONTACT STRUCTURES |
| 摘要 |
Provided is a method of fabricating a semiconductor device, the method including forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs. |
| 申请公布号 |
US2016365279(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201615060641 |
申请日期 |
2016.03.04 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOO Jamin;KIM Youngseok;LEE Kongsoo;BAE Goeun |
| 分类号 |
H01L21/768;H01L21/285 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
forming interconnection structures extending parallel to each other on a substrate; performing a coating process and forming a liquid state silicon source material layer filling an area between the interconnection structures; performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer; and crystallizing the amorphous silicon layer and forming contact plugs. |
| 地址 |
Suwon-si KR |
