发明名称 |
LEVEL SHIFTER AND SOURCE DRIVER INTEGRATED CIRCUIT |
摘要 |
The present embodiments relate to an advanced level shifter having a circuit structure which enables miniaturization and high performance, a source driver integrated circuit and a gate driver integrated circuit, and a display device which include the same. |
申请公布号 |
US2016365063(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201615176587 |
申请日期 |
2016.06.08 |
申请人 |
SILICON WORKS CO., LTD. |
发明人 |
SEO JungIl;JUNG YongIk;YUN JungBae |
分类号 |
G09G5/00;H03K19/0185 |
主分类号 |
G09G5/00 |
代理机构 |
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代理人 |
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主权项 |
1. A level shifter comprising:
first and second N-channel transistors configured to receive an input signal of a low voltage level and an inversion input signal obtained by inverting the input signal; first and second high voltage output transistors configured to receive a driving voltage and output, to first and second output ports, an output signal of a high voltage level corresponding to a voltage level of the driving voltage, and an inversion output signal obtained by inverting the output signal; first and second current control transistors configured to be controlled by a bias voltage and control a current flowing to the first and second high voltage output transistors to be small; and a voltage drop circuit configured to be electrically connected between drain nodes of the first and second N-channel transistors and the first and second output ports, and allow voltage levels of the drain nodes of the first and second N-channel transistors to be lower than voltage levels of the first and second output ports. |
地址 |
Daejeon KR |