TRENCH FORMING METHOD FOR MINIMIZING FORMATION FAIL OF A GATE OXIDE

摘要

PURPOSE: A trench formation method is provided to improve a device performance by minimizing a formation fail of a gate oxide. CONSTITUTION: The method comprises the steps of sequentially coating a nitride layer(4) a photoresist pattern(6) on a pad oxide(3) of a silicon substrate(2); anisotropic etching the exposed nitride layer(4), thereby forming a polymer(8) due to the etching byproducts; partially removing the polymer(8) using a BT(break through) processing for forming a top rounding(B) profile so as to minimize a gate oxide formation fail; and forming a trench by anisotropic etching the exposed silicon substrate(2). The BT process carried out for 30 minutes.