Method for producing barrier-less plug structures

摘要

Methods are provided for the construction of metal-to-metal connections between non-adjacent layers in a structure, such as a semiconductor device. A first metal conductor layer is provided along a substrate. An anti-reflection cap is provided in overlying relation with said first conductor layer. At least a portion of the dielectric layer and the anti-reflection cap is removed to define a passage which extends from an upper surface of the dielectric layer to the first metal conductor. The passage is substantially filled with a fill metal, and a second metal conductor layer is applied over at least a portion of the dielectric layer and the substantially filled passage to electrically connect the first and second metal conductors. A diffusion liner can optionally be applied to the passage prior to application of the fill metal. The passage fill metal and second conductor layer can be integrally formed, and the fill metal and at least one of the conductor layers are formed from the same matrix metal.