发明名称 |
Top surface imaging technique for top pole tip width control in magnetoresistive read/write head processing |
摘要 |
A top surface imaging technique for top pole tip width control in a magnetoresistive ("MR") or giant magnetoresistive ("GMR") read/write head is disclosed in which a multi-layer structure is employed to define the thick photoresist during processing resulting in much improved dimensional control. To this end, a relatively thin upper photoresist layer is patterned with much improved resolution, an intermediate metal or ceramic layer is then defined utilizing the upper photoresist layer as a reactive ion etching ("RIE") mask, with the intermediate layer then being used as an etching mask to define the bottom-most thick photoresist layer in a second RIE process. As a consequence, a much improved sub-micron pole tip width along with a high aspect ratio and vertical profile is provided together with much improved critical dimension control.
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申请公布号 |
US6156487(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19980177901 |
申请日期 |
1998.10.23 |
申请人 |
MATSUSHITA-KOTOBUKI ELECTRONICS INDUSTRIES, LTD. |
发明人 |
JENNISON, MICHAEL J.;PAN, WEI |
分类号 |
G03F7/09;G11B5/31;G11B5/39;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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