发明名称 Circuit for limiting the output voltage of a power transistor
摘要 A circuit for limiting the output voltage from a power transistor connected in series with a resonant load between a voltage supply and a voltage reference, ground, is disclosed. The circuit includes a semiconductor junction element, in particular a diode of the SCR type, having an anode terminal connected to the voltage supply, a cathode terminal connected to a common circuit node between the power transistor and the resonant load, and a control terminal connected to a reference voltage of predetermined value. The reference voltage can be constructed by using a resistor connected in series with a diode across the voltage supply. The SCR diode is constructed using the parasitic PNP-NPN transistors which exist in the structure of the power transistor.
申请公布号 USRE36998(E) 申请公布日期 2000.12.26
申请号 US19990258090 申请日期 1999.02.25
申请人 STMICROELECTRONICS S.R.L. 发明人 PALARA, SERGIO
分类号 H01L29/772;H01L21/8222;H01L27/06;H01L29/76;H03K17/08;H03K17/0814;H03K17/16;H03K17/64;(IPC1-7):H03K5/08;H03K17/60 主分类号 H01L29/772
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