| 摘要 |
PROBLEM TO BE SOLVED: To enhance high speed modulation performance while ensuring a sufficiently long lifetime in an AlGaInP based semiconductor laser. SOLUTION: In the semiconductor laser, a first conductivity type clad layer 20, a semiconductor active layer 30, second conductivity type clad layers 51, 54, 56, a second conductivity type contact layer 60, and a second conductivity type electrode 72 are formed sequentially on the upper surface of a first conductivity type semiconductor substrate 10, a first conductivity type electrode 71 is formed below the first conductivity type clad layer 20, at least one of the second conductivity type clad layers 51, 54, 56 has a ridge structure and arranged such that a current is injected selectively into a specific region 30a of the semiconductor active layer 30, an AlGaInP based semiconductor laser element 2 having laser resonator length of 500μm or above is provided, and the semiconductor substrate 10 side of the semiconductor laser element 2 is secured to a packaging substrate. COPYRIGHT: (C)2007,JPO&INPIT
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