发明名称 SUBSTRATE-TREATMENT METHOD AND RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To perform efficient substrate treatment by suppressing the amount of consumption of treatment gas, in substrate treatment in which a plurality of treatment gases are alternately supplied onto a substrate to be treated. SOLUTION: A substrate-treatment method by a substrate-treating device has a treatment vessel for holding a substrate to be treated inside; a first gas supply means that supplies first treatment gas to the treatment vessel, and includes a flow rate adjusting means; and a second gas supplying means for supplying second treatment gas to the treatment vessel. The substrate-treatment method repeats a first step for controlling the first treatment gas to a first flow rate by the flow rate adjusting means for supplying in a first direction, a second step for discharging the first treatment gas from the treatment vessel, a third step for supplying the second treatment gas to the treatment vessel, and a fourth step for discharging the second treatment gas from the treatment vessel. A treatment gas flow rate stabilization step is provided between the first step in 1 and a first step in 2 executed after it. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006269511(A) 申请公布日期 2006.10.05
申请号 JP20050081878 申请日期 2005.03.22
申请人 TOKYO ELECTRON LTD 发明人 TAKEYAMA TAMAKI;FUTAMURA MUNEHISA
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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