| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication technology of a semiconductor device in which a semiconductor device having a channel length of submicron order can be fabricated by a simple process at low cost. SOLUTION: After a first insulating film 220 is formed on a substrate 210 (refer to Fig. 3(a)), entire surface of the substrate 210 is coated with an insulating material and subjected to bake annealing thus forming a second insulating film 240. Thickness D2 of the second insulating film 240 covering the end e of the first insulating film 220 is thinner than the thickness D3 at other parts. Due to difference in the extent of shrinkage caused by the difference in thickness (D3-D2), a slit ST is formed in the second insulating film 240 located directly above the end e of the first insulating film 220 (refer to Fig. 3(b)). A gate electrode 250 of submicron order depending on the width of the slit ST is formed by utilizing the slit ST (refer to Fig. 3(c)), and then a source region and a drain region are formed oppositely while holding the gate electrode 250 between. COPYRIGHT: (C)2007,JPO&INPIT
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