发明名称 |
Plasma generator and plasma etching apparatus |
摘要 |
A plasma generator for generating a plasma exhibiting a uniform etching rate in a circumferential direction of a sample and a plasma etching device enabling a uniform etching in a circumferential direction of a sample are provided. To generate a plasma of a process gas, the process gas is introduced into a plasma generating chamber while a predetermined pressure is kept, and a high-frequency alternating voltage is applied to a coil. By applying an alternating voltage is applied to a substrate electrode, the plasma generated in the plasma generating chamber is brought into a reaction chamber and a sample is etched. The coil is not wound in a uniform helical shape. One turn of the coil has a first winding portion wound horizontally or generally horizontally and a second winding portion wound at a sharply inclined angle.
|
申请公布号 |
US2007086143(A1) |
申请公布日期 |
2007.04.19 |
申请号 |
US20040596161 |
申请日期 |
2004.11.29 |
申请人 |
SUMITOMO PRECISION PRODUCTS CO., LTD. |
发明人 |
HAYASHI YASUYUKI;MURAKAMI SHOICHI;HABE TAKESHI;IKEMOTO NAOYA |
分类号 |
H01T23/00;H05H1/46;H01J37/32;H01L21/3065 |
主分类号 |
H01T23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|