| 发明名称 | Memory cell structures | ||
| 摘要 | The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode. | ||
| 申请公布号 | US9385315(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201414571752 | 申请日期 | 2014.12.16 |
| 申请人 | Micron Technology, Inc. | 发明人 | Sills Scott E. |
| 分类号 | H01L45/00;H01L27/24 | 主分类号 | H01L45/00 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A memory cell, comprising: a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode; a first dielectric material formed on the first electrode having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode; a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode; and a storage element between the first electrode and the electrode contact portion of the second electrode, wherein the storage element is formed on an upper surface of the first electrode and an upper surface of the first dielectric material. | ||
| 地址 | Boise ID US | ||