POLYCRYSTALLINE SILICON ROD, PRODUCTION METHOD THEREFOR, AND FZ SILICON SINGLE CRYSTAL

摘要

In the present invention, from a region from the center (r = 0) to R/3 of a polycrystalline silicon rod, a plate-shaped sample having as a main surface a cross-section of the polycrystalline silicon rod which is orthogonal to the diameter direction thereof is collected. The plate-shaped sample is disposed at a position where a Bragg reflection from a face of Miller indices (111) is detected. The plate-shaped sample is rotated in-plane by a rotation angle Φ with the center of the plate-shaped sample serving as the rotation center in such a manner that an X-ray irradiation region defined by a slit performs a Φ scan on the main surface of the plate-shaped sample, and a diffraction chart showing the dependency, on the plate-shaped sample rotation angle, of the intensity of the Bragg reflection from the face of Miller indices (111) is determined. A ratio (Sp/St) is calculated between a surface area Sp of a peak portion that has appeared in the diffraction chart and the total surface area St of the diffraction chart. A polycrystalline silicon rod with a surface area ratio Sp/St evaluated by the above procedure that is 2% or less is selected.