发明名称 |
Tungsten capacitor anode and process for production thereof |
摘要 |
A capacitor anode including a tungsten sintered body having an average pore diameter of 0.3 μm or less; and a method for producing the anode. The method includes forming tungsten powder into a molded body having a density (Dg) of 8 g/cm3 or more and then sintering the molded body to a density (Ds) of at least 1.15 times the density (Dg) to form a tungsten sintered body having an average pore diameter of 0.3 μm or less. |
申请公布号 |
US9478360(B2) |
申请公布日期 |
2016.10.25 |
申请号 |
US201214366577 |
申请日期 |
2012.08.30 |
申请人 |
SHOW A DENKO K.K. |
发明人 |
Naito Kazumi |
分类号 |
H01G9/052;C22C27/04;B22F3/12;H01G9/00;H01G9/042;B22F3/11;H01G9/15 |
主分类号 |
H01G9/052 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method for producing a capacitor anode by forming tungsten powder into a molded body having a molded density of 8 g/cm3 or more, sintering the molded body to have a sintered density 1.15 times or higher than the molded density and obtaining a tungsten sintered body having an average pore diameter of 0.3 μm or less,
wherein the tungsten powder has an average particle size of 0.5 μm or less, and the tungsten powder having an average particle size of 0.5 μm or less is granulated into granulated powder at a temperature of 1,480° C. or more, and the granulated powder is formed to the molded body having a molded density of 8 g/cm3 or more. |
地址 |
Tokyo JP |