| 发明名称 |
LIGHT-EMITTING DEVICE AND METHOD OF FORMING THE SAME |
| 摘要 |
A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer. |
| 申请公布号 |
US2016307959(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201415100748 |
申请日期 |
2014.11.18 |
| 申请人 |
Nanyang Technological University |
发明人 |
Zhang Xueliang;Zhang Zi-Hui;Ji Yun;Ju Zhen Gang;Liu Wei;Tan Swee Tiam;Sun Xiaowei;Demir Hilmi Volkan |
| 分类号 |
H01L27/15;H01L33/32;H01L33/22;H01L33/44;H01L33/38 |
主分类号 |
H01L27/15 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device comprising:
an active layer; a first semiconductor layer of a first conductivity type, the first semiconductor layer in physical contact with the active layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer in physical contact with the active layer and opposite the first conductive layer; a first electrode in physical contact with a first side of the first semiconductor layer; a second electrode in physical contact with a second side of the first semiconductor layer, the second side of the first semiconductor layer different from the first side of the first semiconductor layer; and a third electrode in physical contact with the second semiconductor layer. |
| 地址 |
Singapore SG |
