| 摘要 |
PURPOSE: A method is provided to easily form a contact hole with a deep depth on an insulated material layer, thereby minimizing the poor quality of a semiconductor device. CONSTITUTION: After multi layers of an insulated material layer is formed on a semiconductor substrate, on which a desired pattern such as a gate or a capacitor is previously formed, the insulated material layer and the pattern under the layer are etched to form a contact hole. The contact hole is achieved by steps of firstly etching with using a gas consisting of about 65 to 120 sccm of CHF3, about 12 to 23 sccm of CH2F2, about 20 to 40 sccm of Co, and about 300 to 550 sccm of Ar, and secondarily etching with using a gas consisting of about 55 to 105 sccm of CH2F2, about 55 to 105 sccm of O2, and about 210 to 390 sccm of Ar.
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