WIRE STRUCTURE OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: The semiconductor device is provided to have a wire structure and fabricating method thereof. CONSTITUTION: The semiconductor device comprises the steps of: forming a first insulating film on a semiconductor substrate, forming a second insulating film having etching alternative ratio with the first insulating film on the first insulating film, forming a second insulating film pattern having an opening part(615) which exposes a part of the first insulating film by patterning the second insulating film, forming a trench(335) having wider width than the width exposed by the opening part by patterning a part of the first insulating part exposed by the opening part, forming a conductive film filling the trench and the opening part on the second insulating film, forming a first wire(610) of which a part of upper surface is covered and which has narrower exposed surface width than a part of width which is filled by flattening the conductive film through chemical mechanical polishing. Accordingly, processing margin of the following processing like an upper wire processing can be secured because flattening processing like CMP method can embody and apply to the stabilization of the processing.