| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve a wavelength-variable semiconductor laser that maintains high-output characteristics, at the same time, has a large wavelength-variable range, and can independently control temperature in each region. SOLUTION: This wavelength-variable semiconductor laser is achieved by improving a wavelength-variable semiconductor laser for changing the oscillation wavelength of a laser output beam, and is equipped with a wavelength-variable semiconductor laser chip and a base. The wavelength variable semiconductor laser chip has active, phase adjustment, and distribution Bragg reflection regions. The base has a groove that mounts the wavelength-variable semiconductor laser chip and is provided directly below the phase adjustment region and the waveguide of the distribution Bragg reflection region, and a partition wall that divides the groove into a phase-adjustment-region side and a distribution- Bragg-reflection-region side.</p> |
