| 摘要 |
A magnetic memory device of the present invention includes a first wiring conductor having a first ability to flow a current therethrough, a second wiring conductor having a second ability larger than the first ability to flow a current therethrough, a magnetic memory cell having a pinned magnetic layer coupled to the second wiring conductor, a free magnetic layer coupled to the first wiring conductor and anon-magnetic layer sandwiched between the first and second magnetic layers. The first wiring conductor is made by aluminum and the second wiring conductor is made by copper.
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