METHOD FOR GROWING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which a high quality group III nitride crystal having a practical large size and large area can be manufactured at a lower cost compared with the conventional ones.

SOLUTION: In the method for growing the group III nitride crystal from a solution in which at least an alkali metal, a group III metal raw material and nitrogen are dissolved, the group III nitride crystal 29 is grown by incorporating a substance for increasing the growth speed in the direction parallel to the c-axis of the group III nitride crystal higher than that in the direction perpendicular to the c-axis into the solution.

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