| 摘要 |
<p>A method for forming a fine pattern in a semiconductor device is provided to form the hard mask pattern having a minimum spacing interval by performing a double etching process on two kinds of hard mask layer having different etching selection ratio. A first hard mask pattern(115) having a first width and a first thickness is formed on an etch target layer(113) formed on a semiconductor substrate(111). A second hard mask film is formed on the first mask pattern to expose the first hard mask pattern. The substrate is subjected to an etchback process to remove an upper portion of the first hard mask pattern. The substrate is subjected to a primary trimming etching process to form a second hard mask pattern(117-2) having a sloped sidewall. Then, the substrate is subjected to a second trimming process to form a third hard mask pattern having a second width. The first and the second hard mask patterns are patterned.</p> |
