发明名称 MAGNETIC SENSOR CIRCUIT, SEMICONDUCTOR DEVICE, AND MAGNETIC SENSOR DEVICE
摘要 A magnetic sensor circuit has Hall devices 10 X and 10 Y, selection switch circuits 20 X and 20 Y, amplifier units 30 X ad 30 Y, a comparison unit 60, capacitors 41 X, 42 X, 41 Y, and 42 Y, and switch circuits 51 and 52. The Hall voltages obtained from the Hall devices 10 X and 10 Y are outputted in either of a first and a second states switched by the selection switch circuits 20 X and 20 Y. The amplifier units 30 X ad 30 Y each operate differentially and, if the difference between their outputs is greater than a set hysteresis width, the output logic of a detection signal Sdet is shifted. This configuration helps reduce the influence of device offset voltages in the Hall devices, and also helps reduce the influence of input offset voltages arising in the amplifiers.
申请公布号 US2008030191(A1) 申请公布日期 2008.02.07
申请号 US20070828216 申请日期 2007.07.25
申请人 ROHM CO., LTD. 发明人 NISHIKAWA HIDETOSHI
分类号 G01R33/02 主分类号 G01R33/02
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