| 摘要 |
A method for continuously depositing a high resistance buffer layer and a window layer (transparent conductive film) by MOCVD method in which output characteristics equivalent to those in conventional solution growth method can be attained while simplifying the method and equipment for film deposition and sharply reducing production costs by reducing the material cost and the waste treatment cost. Since a multilayer structure is formed continuously in the order of a high resistance buffer layer (1D) and a window layer (1E) by MOCVD on the light absorbing layer (1C) of a solar cell semi-finished substrate where a metal rear surface electrode layer (1B) and the light absorbing layer (1C) are deposited sequentially on a glass substrate (1A), film deposition method and equipment are simplified and the material cost and the waste treatment cost can be reduced. |
