| 摘要 |
An isolation structure of a semiconductor device and a forming method thereof are provided to perform an oxide film gap fill process by forming a dual trench. A dual trench(150) is formed inside a semiconductor substrate(110). The dual trench is filled with a device isolation film(170). A protrusion is formed in the center of a surface of the dual trench to prevent the generation of the void in the central region of the dual trench. The device isolation film is formed by gap-filling the oxide film in the dual trench. The predetermined step is formed between the upper side of the device isolation film and the upper side of the semiconductor substrate. The device isolation film is made of the oxide film to prevent the diffusion of the impurity included in the silicon crystal.
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