Method of manufacturing semiconductor device by forming a film on a substrate

摘要

Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including a discontinuous chemical adsorption layer of a molecule constituting a gas containing the first element by supplying the gas containing the first element to the substrate under a condition where chemical adsorption of the molecule on a surface of the substrate is not saturated; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes a discontinuous chemical adsorption layer of a molecule of a first gas that includes the first element by supplying the first gas to the substrate under a condition that a chemical adsorption of the molecule on a surface of the substrate is not saturated, and(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.