| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a simple method for measuring carrier behavior of a material such as an amorphous organic semiconductor. <P>SOLUTION: A method for measuring carrier behavior of a material 1S to be measured comprises the steps of: photo-exciting the region of the material 1S to be measured of a specimen 1 under application of an electric field through excited optical pulse irradiation; irradiating the region of the specimen 1 with TBC probe light; measuring modified HTOF intensity; and measuring TBC intensity. The excited optical pulse is an optical pulse for a predefined short-time irradiation, composed of fluxes coherent to each other. The TBC probe light is light composed of two fluxes coherent to each other, having a wavelength identical to that of the excited optical pulse. Both of the excited optical pulse and the TBC probe light are applied through optical path groups 14 and 16. The modified HTOF intensity is measured as the change of diffraction intensity of a diffraction intensity measuring probe light with respect to time. The TBC intensity is measured as the change of the TBC probe light with respect to time. <P>COPYRIGHT: (C)2013,JPO&INPIT |
