发明名称 ELECTRO-ABSORPTION OPTICAL MODULATION DEVICE AND METHOD OF FABRICATING THE SAME
摘要 Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof
申请公布号 US2016202504(A1) 申请公布日期 2016.07.14
申请号 US201514848077 申请日期 2015.09.08
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM In Gyoo;KIM Gyungock;KIM Sang Hoon
分类号 G02F1/025 主分类号 G02F1/025
代理机构 代理人
主权项 1. An electro-absorption optical modulation device comprising: a semiconductor substrate; a first clad layer in a trench region formed in the semiconductor substrate; an optical waveguide core layer disposed spaced apart from sides of the trench region on the first clad layer and extended in a first direction; an optical modulation part disposed on the optical waveguide core layer and having an island shape; and a second clad layer covering the optical modulation part and the optical waveguide core layer.
地址 Daejeon KR