发明名称 |
ELECTRO-ABSORPTION OPTICAL MODULATION DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof |
申请公布号 |
US2016202504(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
US201514848077 |
申请日期 |
2015.09.08 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM In Gyoo;KIM Gyungock;KIM Sang Hoon |
分类号 |
G02F1/025 |
主分类号 |
G02F1/025 |
代理机构 |
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代理人 |
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主权项 |
1. An electro-absorption optical modulation device comprising:
a semiconductor substrate; a first clad layer in a trench region formed in the semiconductor substrate; an optical waveguide core layer disposed spaced apart from sides of the trench region on the first clad layer and extended in a first direction; an optical modulation part disposed on the optical waveguide core layer and having an island shape; and a second clad layer covering the optical modulation part and the optical waveguide core layer. |
地址 |
Daejeon KR |