TRANSISTOR MANUFACTURING METHOD AND TRANSISTOR

摘要

A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer so as to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.

主权项

1. A transistor manufacturing method comprising:
forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate on which a source electrode, a drain electrode, and an organic semiconductor layer that comes into contact with surfaces of the source electrode and the drain electrode are formed so as to cover the organic semiconductor layer; forming a second insulator layer so as to cover the first insulator layer; forming a plating base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the plating base film, forming a gate electrode on the surface of the plating base film by electroless plating, wherein the forming of the plating base film is performed by applying a liquid substance which is a formation material of the plating base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.