FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH GE-DOPED INTER-LAYER DIELECTRIC (ILD) STRUCTURE

摘要

A fin field effect transistor (FinFET) device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending above the substrate. The FinFET device structure includes an isolation structure, and the fin structure is embedded in the isolation structure. The FinFET device structure also includes a gate structure formed on a middle portion of the fin structure. The gate structure has a top portion and bottom portion, and the bottom portion is wider than the top portion. The FinFET device structure further includes a source/drain (S/D) structure formed adjacent to the gate structure.

主权项

1. A fin field effect transistor (FinFET) device structure, comprising:
a substrate; a fin structure extending above the substrate; an isolation structure, wherein the fin structure is embedded in the isolation structure; a gate structure formed on a middle portion of the fin structure, wherein the gate structure has a top portion with a top width in a direction parallel to the fin and bottom portion with a bottom width in a direction parallel to the fin, and the bottom width is wider than the top width; a source/drain (S/D) structure formed adjacent to the gate structure; and an inter-layer dielectric (ILD) structure formed adjacent to the gate structure, wherein the ILD structure has a gradient germanium (Ge) concentration.