| 主权项 |
1. A semiconductor device, comprising a semiconductor substrate that includes an IGBT region,
wherein the semiconductor substrate includes a front surface and a rear surface, the IGBT region comprises:
an emitter region being of n-type and exposed on the front surface;a body region being of p-type and in contact with the emitter region;a drift region being of n-type, located on a rear surface side with respect to the body region, and separated from the emitter region by the body region; anda collector region being of p-type, located on the rear surface side with respect to the drift region, separated from the body region by the drift region, and exposed on the rear surface, a gate electrode is located so as to face, via a gate insulating film, a part of the body region in a range separating the emitter region from the drift region, a first lifetime control layer extending along a planar direction of the semiconductor substrate is provided in a range in the drift region that is closer to the rear surface than an intermediate portion of the semiconductor substrate in a thickness direction of the semiconductor substrate, a crystal defect density in the first lifetime control layer is higher than any of a crystal defect density in a region adjacent to the first lifetime control layer on the rear surface side and a crystal defect density in a region adjacent to the first lifetime control layer on a front surface side, and a crystal defect density in a region between the first lifetime control layer and the rear surface is lower than a crystal defect density in a region between the first lifetime control layer and the front surface. |
