| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which enables a stable operation in high-frequency operation and has favorable high-frequency properties.SOLUTION: A semiconductor device has: a buffer layer 21 provided on a substrate 10; a semiconductor layer which is provided on the buffer layer 21 and includes a co-doped region 22 and a high-resistance region 23; a carrier transit layer 31 provided on the semiconductor layer; a carrier supply layer 32 provided on the carrier transit layer 31; and a gate electrode 41, a source electrode 42 and a drain electrode 43 which are provided on the carrier supply layer 32. The co-doped region 22 is formed in a region between the gate electrode 41 and drain electrode 43 in plan view, and Si and at least one impurity element selected from Fe and C are doped. The high-resistance region 23 is formed in a region just below the gate electrode 41 and either of Fe of C is doped as an impurity element.SELECTED DRAWING: Figure 4 |
