BROADBAND PHOTORESISTOR

摘要

A photoresistor comprising: a semiconductor substrate selected from Gallium-Nitride, Gallium-Arsenic, Gallium Phosphide, and Aluminum Gallium Nitride, or any combination thereof; a layer of organic molecules that is disposed on at least a portion of the surface of the semiconductor substrate; and two conductors in contact with the layer of organic molecules.

主权项

1. A photoresistor comprising:
a semiconductor substrate comprising a Group III-V material selected from the group consisting of: InAs, InP, InN, GaN, InSb, InAsP, InGaAs, GaAs, GaP, GaSb, AlP, MN, AlAs, AlSb, CdSeTe and ZnCdSe; a layer of organic molecules that is disposed on at least a portion of the surface of the semiconductor substrate; and two contacts in contact with the layer of organic molecules.