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发明名称
Phase change RAM including resistance element having diode function and methods of fabricating and operating the same
摘要
申请公布号
EP1816682(A3)
申请公布日期
2008.07.16
申请号
EP20070101747
申请日期
2007.02.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, KI-JOON;KHANG, YOON-HO;NOH, JIN-SEO
分类号
H01L45/00;H01L29/24;H01L29/861
主分类号
H01L45/00
代理机构
代理人
主权项
地址
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