| 摘要 |
The present invention provides a pattern forming method and a pattern formation apparatus capable of suppressing variations in line width dimensions of a resist pattern. The pattern forming method of the present invention is a pattern forming method comprising a first step for coating a photoresist onto a wafer W, a second step for selectively exposing the wafer W coated with the photoresist, a third step for carrying out baking treatment on the exposed wafer W, and a fourth step for carrying out development treatment on the baked wafer W; wherein, in the third step, the baking treatment is carried out by forming a first atmosphere containing at least moisture, and then replacing the first atmosphere and forming a second atmosphere not containing moisture, followed by continuing the baking treatment.
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