| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology for forming a minute pattern, using a simple method. <P>SOLUTION: In a forming method of the minute pattern, including a step for forming a heating type resist film on a substrate, a step for applying energy in a region where the minute pattern of the resist film is formed and a step for developing the resist film; the material of the resist film is a metal oxide, having a composition in which oxygen is deficient in trace amount from stoichiometric composition; the energy applied to the resist film is pressure; and the resist film is developed by using an alkaline developer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
