| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can prevent read disturbance without relying on an ECC only. <P>SOLUTION: The semiconductor storage device comprises a first memory area 22 which has a plurality of memory groups including a plurality of memory cells so that an address is assigned for each memory group and data is erased is each memory group, a second memory area 23 for temporarily storing data which is read out from the first memory area or written in the first memory area, a read counter 24 for storing the number of times of data reading for every memory group, an error correcting circuit for calculating the number of error bits of the read out data, and a control section 21 for executing refreshing by temporarily reading the data of the memory group in which the read out data is stored in the second memory area and writing back the data into the memory group when the number of error bits exceeds a first threshold or the number of times of reading data exceeds a second threshold. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
