| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor element (MBOT) which can be stably provided by a simple manufacturing process; which has a structure enabling mass production; and which has large current modulation and excellent on/off ratio under a low voltage between an emitter electrode and a collector electrode.SOLUTION: A transistor element forming a layered structure in which a sheet-like base electrode 13 is arranged between an emitter electrode 12 and a collector electrode 11, and p-type organic semiconductor layers 21, 22 are provided on two sides of the base electrode comprises: an organic semiconductor layer which is provided between the emitter electrode and the base electrode and which includes at least one layer of p-type organic semiconductor 21; and a collector layer which is provided between the base electrode and the collector electrode and which includes a layered structure composed of at least two layers of p-type organic semiconductor layers 22A, 22B having HOMO levels (highest occupied molecular orbital energy levels) different from each other and formed from p-type semiconductor materials that are the same with or different from each other. |
