发明名称 積層膜の形成方法およびその形成装置
摘要 A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.
申请公布号 JP5922542(B2) 申请公布日期 2016.05.24
申请号 JP20120205788 申请日期 2012.09.19
申请人 東京エレクトロン株式会社 发明人 大部 智行;黒川 昌毅;入宇田 啓樹
分类号 H01L21/318;C23C16/42;H01L21/31;H01L21/316 主分类号 H01L21/318
代理机构 代理人
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