TRANSISTORS HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND METHOD FOR DEPOSITING THIS LAYER

摘要

A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.