SEMICONDUCTOR DEVICE

摘要

To maintain constant an output voltage of a boosted voltage circuit even when a program current of a nonvolatile memory increases; in a boosted voltage circuit provided in a semiconductor device, an output voltage of a charge pump is detected by a voltage dividing circuit, and on-off control is performed on an oscillation circuit for driving the charge pump so that the detected output voltage becomes constant. Further, an output current of the charge pump is detected, and a control current according to a magnitude of the detected output current is generated. The control current is fed into or drawn from a coupling node between a plurality of series-coupled resistance elements configuring the voltage dividing circuit.

主权项

1. A semiconductor device comprising:
a memory array in which electrically rewritable memory cells are arranged in a matrix; and a boosted voltage supply circuit for supplying a boosted voltage to the memory array to pass a write current through a plurality of memory cells subjected to writing during data writing, the boosted voltage supply circuit comprising: a charge pump for generating the boosted voltage; an oscillation circuit for generating a clock signal for driving the charge pump; a voltage dividing circuit for outputting a divided voltage of the boosted voltage; a comparator for comparing the divided voltage with a reference voltage and performing on-off control of the oscillation circuit based on a comparison result; a current detection circuit for detecting an output current of the charge pump; and a control current generation circuit for generating a control current having a magnitude according to the detected output current, wherein the control current generation circuit is configured to feed or draw the generated control current into or from any coupling node between a plurality of series-coupled resistance elements configuring the voltage dividing circuit.